The adsorption and thermal decomposition of triethylgallium (TEG) on GaAs has been studied using thermal desorption and XPS techniques. Pure Ga films are deposited when adsorbed TEG layers on GaAs are heated in a reaction which competes with TEG and diethylgallium (DEG) desorption. Ethene, ethene and hydrogen are detected as the decomposition products of the overall cracking reaction. © 1990.
